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Laser polishing is achieved by local absorption of laser power within the polishing spot causing the surface and its sub-surface region to melt and flow reducing surface roughness and removing sub-surface damage. In this paper we present a novel fabrication controlling method for laser polishing processes called C-Lasso (Control of LASer Surface Optimization, Patent Pending), monitoring in situ the surface smoothening process. It is possible to determine and control the minimum dwell time a footprint needs to stay at a certain point before moving further. C-Lasso enables to avoid unnecessarily long local dwell times. Besides the functioning principle, a proof of concept will be presented as well as experimental data demonstrating the in situ monitoring.
16:50 - 17:10
Preliminary results of a new proposal for objective human independent striae measurement
Pforzheim University, Germany
17:10 - 17:30
Wavefront evaluation method based on imaging performance: relative wavefront gradient deviation
Bin Xuan, Jing-jiang Xie
Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), China, People's Republic of
A wavefront evaluation method based on imaging performance is proposed. When wavefront gradient is normalized by Airy disk and evaluated on the basis of image energy center, relative wavefront gradient deviation is deduced. It is independent on aperture size and can be used to evaluate imaging performance precisely.
17:30 - 17:50
Development of wavefront sensor for in-situ measurement of freeform optics
Dali R. Burada
Indian Institute of Technology Delhi, India
17:50 - 18:10
Metrology for Freeform and Wafer level optics by UA3P
Dieter Ramm, Tomofumi Morishita, Keishi Kubo
Panasonic Automotive & Industrial Systems Europe GmbH, Germany
Recently the demand of the metrology for large asphere and freeform are increasing for mobile phone and other area. We have developed new technology having the accuracy is less 0.1um and scanning speed is 30mm/s. And we have developed special unit and function for this machine to measure 4,000 lens on the single wafer.