Overview and details of the sessions of this conference. Please select a date or location to show only sessions at that day or location. Please select a single session for detailed view (with abstracts and downloads if available).
Location:Room 22a, 2nd floor, ICM Light Engineering and Optofluidics
16:00 - 16:30
High quality modular LEDs-based UV lithography illumination
Johana Bernasconi1, Toralf Scharf1, Hans Peter Herzig1, Uwe Vogler2, Raoul Kirner2
1EPFL, Switzerland; 2SUSS MicroOptics SA, Switzerland
A new modular LED-based illumination system is presented in this contribution. It allows to achieve excellent uniformity and angle management at high efficiency. The light is collected at the output of the LED thanks to classical parabolic surface reflector machined in aluminium. All angles are collected and transformed into a narrower angular spectrum. The reflectors are followed by a homogenizing system based on microlens array to increase intensity uniformity.
16:30 - 17:00
Polysiloxane Based Host Material for Solution-Processed Electrophosphorescent Device
Zhongjie Ren, Dianming Sun, Shouke Yan
Beijing University of Chemcial Technology, China, People's Republic of
A series of solution processed polysioxanes with the different pendant groups as electrophosphorescent hosts have been developed successfully, which displays the high thermal, electrochemical, and morphological stability, good film forming ability and high performance.
17:00 - 17:30
Dislocations in semipolar III-nitride LED and LD heterostrctures
Aleksei E. Romanov1, Andrei M. Smirnov1, Vladislav E. Bougrov2, Erin C. Young3, James S. Speck3
1ITMO University, Department of Modern Functional Materials, Saint Petersburg, Russian Federation; 2ITMO University, Department of Light Engineering and Optoelectronics, Saint Petersburg, Russian Federation; 3UCSB, Materials Department, Santa Barbara,USA
We have calculated the critical thickness for misfit dislocation formation in lattice mismatched semipolar and nonpolar LED and LD III-nitride semiconductor heterostructures for the dislocations, which are generated from prismatic or basal slip taking into account transversally isotropic symmetry of the crystal lattice of III-nitride semiconductors.