Conference Agenda
Overview and details of the sessions of this conference. Please select a date or location to show only sessions at that day or location. Please select a single session for detailed view (with abstracts and downloads if available).
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STE PS_B5: Parallel Session B5 Location: Room U I6 Session Chair: Lukas Wojarski, TU Dortmund University Session Chair: Alexandra Belibou, Transilvania University of Brasov Digital Tools | |
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4:48pm - 5:06pm
Unified Model for MOSFET Transfer Characteristic with Extraction of Parameters National University of Science and Technology Politehnica Bucharest, Romania The metal-oxide-semiconductor field-effect-transistor (MOSFET) is the most used transistor nowadays in both digital and analog applications. With the need for low-power circuits and some analog computation functions, the subthreshold (low current) regime of the MOSFET is also used. Therefore, in modelling one must account for two current domains, over threshold voltage and subthreshold, with two different drain current versus gate voltage formulas. Also, the point of transition from one formula to the other must be determined, therefore a longer calculation time is needed. It is useful to determine a unified model and corresponding formula for MOSFET drain current, so the calculation does not depend on the above or subthreshold value of the gate voltage. This is determined in this work together with the extraction of the MOSFET parameters in a practical case. | |
