Conference Agenda
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STE PS_D3: Special Session STIAM Location: Room U I2 Session Chair: Cristian Ravariu, UNSTPB University, Bucharest Special Session: Simulation Tools - from Industry Applications to bio-Medical engineering (STIAM) | |
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9:13am - 9:26am
From Diamond to Graphene Field Effect Transistor Simulations 1: UNSTPB University, Bucharest, Romania; 2: National Institute for Research and Development in Microtechnologies – IMT, Voluntari Ilfov, Romania; 3: Mohan Babu University Tirupati, India; 4: Vignan's Foundation for Science Technology and Research Vadlamudi A.P, India Field Effect Transistors with Graphene (G-FETs) seem to be a serious candidate, as alternative to the traditional MOSFET transistors, benefiting from small dimensions, sometimes devices created on a single atomic layer, but accompanied by higher currents than in silicon, as the literature reported. Therefore, the G-FETs simulation represents a strong tool to develop this device area. The most reputable device simulation software is Silvaco (Athena, Atlas). How-ever, in the libraries of this software does not exist graphene, as a semiconductor material. However, graphene is a 2-dimensional sheet of carbon atoms, arranged in hexagonal shape, a configuration similar to the diamond. Therefore, the first G-FET transistor simulated in this work will use diamond with all its intrinsic properties. | |
