Conference Agenda

Session
SES-08: THz Generation
Time:
Friday, 27/June/2025:
11:00am - 12:15pm

Session Chair: Fabian Friederich
Session Chair: Peter Haring-Bolívar
Location: Dorint Parkhotel Siegen

Patmosweg 60, 57078 Siegen

Presentations

Over octave wide spintronic THz frequency comb generation with 30dB dynamic range

Pierre Kolejak1,2, Geoffrey Lezier1, Guillaume Ducournau1, Nicolas Tiercelin1, Jean-Francois Lampin1, Mathias Vanwolleghem1

1Universite de Lille, CNRS, Centrale Lille, Universite Polytechnique des Hauts-de-France, UMR 8520-IEMN, France; 2Rheinland-Pfälzische Technische Universität Kaiserslautern, Germany

We have demonstrated experimentally how ultrabroadband inverse spin Hall emitters present an unprecedented new scheme for room temperature THz frequency comb generation. Building on previous proof-of-principle demonstrations, we demonstrate here by improved experimental developments how this spintronics comb downconversion effectively does not present any frequency rolloff at least up to 1,05THz, contrary to standard photoswitches. A theoretical and numerical model implementing spin Hall dynamics in nanometric FM/HM stacks predict photomixing bandwidths up to 10THz.



Terahertz Electronic and Spin Currents in Wafer-Scale van der Waals Bi2Se3/WSe2 Heterostructures and Polymorphs

Martin Micica

Ecole Normale Supérieure (ENS), Paris, France

Van der Waals heterostructures offer engineered materials with physical phenomena, including optical nonlinearities and spin-to-charge conversion. However, their use in the terahertz range has been limited due to reliance on exfoliated materials, restricting scalability. Here, we realize large-area crystalline heterostructures combining topological insulators, TMDs, and ferromagnets, enabling terahertz electronic and spin currents via optical down-conversion.

We demonstrate how TMD polymorphs (1T′, 2H, 3R) significantly alter terahertz responses with a single monolayer change, influencing both electrical and magnetic properties. Additionally, crystal symmetry impacts magnetic behavior, revealing nonlinear effects in the 1T′ polymorph. This integration of diverse materials establishes a scalable platform for next-generation photonic, electronic, and spintronic devices.



Efficient Terahertz Frequency Upconversion via Four-Wave Mixing in HgTe Heterostructures

Tatiana Aureliia Uaman Svetikova1,3, Igor Ilyakov1, Alexey Ponomaryov1, Thales de Oliveira1, Christian Berger2, Lena Fürst2, Florian Bayer2, Jan-Cristoph Deinert1, Gulloo Lal Prajapati1, Atiqa Arshad1, Elena G Novik3, Alexej Pashkin1, Manfred Helm1,3, Stephan Winnerl1, Hartmut Buhmann2, Laurens W. Molenkamp2, Tobias Kiessling2, Sergey Kovalev1,4, Georgy V. Astakhov1

1Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany; 2Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany; 3Technische Universität Dresden, 01062 Dresden, Germany; 4Fakultät Physik, Technische Universität Dortmund, 44227 Dortmund, Germany

Frequency mixing in the terahertz (THz) range holds promise for bridging the sub-THz and multi-THz spectral domains, critical for next-generation wireless communication and ultrafast signal processing [1]. We demonstrate room-temperature upconversion of broadband sub-THz signals (0.1–0.5 THz) into higher THz bands using a 70 nm-thick HgTe-based Dirac semimetal, leveraging its strong third-order nonlinear response without requiring resonant enhancement. The process relies on four-wave mixing (FWM), driven by the high χ(3) of HgTe, which arises from its gapless Dirac-like dispersion and long carrier relaxation times [2]. Our dual-source excitation scheme combines broadband pulses from a photoconductive antenna (PCA) with narrowband superradiant pulses from the TELBE source [3]. When coherently overlapped in the HgTe film, the input fields generate distinct frequency sidebands at fhigh = fT + fa ​ and flow = fT - fa, as expected for third-order FWM. A field conversion efficiency exceeding 2% was achieved—among the highest reported for solid-state THz nonlinear processes at ambient conditions [2]. The efficiency scaling with field strengths and polarization confirms the coherent and χ⁽³⁾-driven nature of the process. These results establish HgTe Dirac semimetals as highly promising platforms for THz photonics, with further enhancement anticipated from multilayer or metamaterial integration [4].



High-Speed Control of Circular THz Radiation from Two-Color Laser-Induced Gas Plasma

Anna Martinez1,2, Luc Bergé3, Jonathan Houard4, Angela Vella4, Domenico Paparo5

1Scuola Superiore Meridionale, Largo San Marcellino, 80138 Napoli, Italy; 2Università di Napoli “Federico II”, Complesso Universitario di Monte Sant’Angelo, via Cintia, 80126 Napoli, Italy; 3Centre des Lasers Intenses et Applications, Université de Bordeaux-CNRS-CEA, 33405 Talence Cedex, France; 4University Rouen Normandie, INSA, CNRS, Normandie University, GPM UMR 6634, F-76000 Rouen, France; 5Institute of Applied Sciences and Intelligent Systems, CNR, via Campi Flegrei 34, 80078 Pozzuoli, Italy

We present a simple and cost-effective single-arm technique for generating broadband circularly polarized THz radiation, achieving record ellipticity up to 0.99. By adjusting the chirp of the fundamental wave, the orientation, tilt, and position of a single BBO crystal, we obtain stable circular polarization up to 40 THz, with high ellipticity maintained to 8 THz. Notably, the polarization remains robust under chirp-induced spectral tuning, enabling bandwidth control without loss of polarization. Leveraging the high sensitivity of THz polarization to crystal alignment, we propose two high-speed modulators: a Pockels cell for nanosecond-scale control via FHW polarization rotation, and an acousto-optic beam deflector to modulate the pump incidence angle. These approaches enable real-time manipulation of THz polarization and emission direction, opening new possibilities in ultrafast communication, adaptive imaging, and polarization-sensitive spectroscopy.