Conference Agenda

This presentation introduces Space X‑EUV optical technology and its applications. It covers key optical components such as EUV/FUV multilayer mirrors, thin‑film filters, and single‑photon counting imaging detectors. Dedicated testing and calibration facilities for both components and full instruments are described. The solar observation section includes the Fengyun‑3E Solar X‑EUV Imager, the Lyman‑alpha Solar Telescope, and the Fengyun‑4C Solar EUV Imager. The Earth observation section presents the Extreme Ultraviolet Camera on Chang’e‑3, the dual‑band imager on Queqiao‑2, the Fengyun‑3D Wide Angle Aurora Imager, and the Fengyun‑3H dual‑band wide‑angle auroral imager.

Linearity characterization of the wavefront phase imaging (WFPI) sensor using a piezoelectric active deformable plate (ADP), with particular attention to the influence of piezoelectric creep behavior. A R2 ~ 1 is achieved.

The development of high speed all optical logic and signal processing is based on the control or

manipulation of a light signal with another light signal. Optical bistability provides a fundamental

mechanism for this, offering two distinct states via hysteretic behavior . While traditional bistable

devices suffer from high energy footprints due to weak bulk nonlinearities, subwavelength metasurfaces

significantly reduce switching thresholds through localized near-field enhancement . Here, we numer-

ically demonstrate an all-optical cross-modulation effect using a metal-dielectric-metal metasurface.

Our design utilizes a Polyimide spacer as an active nonlinear platform (χ(3) ≈ 10−18 m2/V2). The

high-Q resonant states provide the necessary positive feedback, while the engineered spatial overlap

between hotspots of orthogonal polarizations enables cross-wavelength modulation.

The development of cost-effective and highly sensitive photoconductive photodetectors is imperative to advance optical communication systems for human-machine interaction. This study presents a β-Ga2O3 photoconductive photodetector employed in an anti-interference optical human–machine interaction system that demonstrates superior responsivity and minimized dark current, attributed to the strategic modulation of intrinsic defects. Through first-principles simulations, the defect dynamics across various growth conditions are systematically elucidated, enabling the precise synthesis of β-Ga2O3 films with markedly diminished shallow-donor gallium interstitials. A super low dark current of 4.15×10-12 A is achieved even under 40 V bias, accompanied by high responsivity of 2.26 A·W-1 and superior detectivity of 1.14×1014 Jones. Ultimately, the β-Ga2O3 photodetector is employed in human–machine interaction systems for robot arm control, which enables the system to demonstrate excellent resistance to random noise. This facilitates the integration of more efficient algorithms. Consequently, the system achieves an 88.46% reduction in reading time and a 78.17% reduction in required storage space, thereby demonstrating the substantial potential of cost-effective, highly sensitive β-Ga2O3 in the era of the Internet of Things.