Time: Tuesday, 10/Sept/2024: 11:45am - 1:15pm Session Chair: Pavel Cheben, nrc, Canada |
Location: A.1.1 |
Invited-Keynote
ID: 400 / TOM1 S1: 1
TOM 1 Silicon Photonics and Integrated Optics
Invited - Advances in silicon photonics with quantum dot lasers
The University of Tokyo, Japan
More than forty years ago, in 1982, we proposed the concept of quantum dot lasers and at the same time theoretically predicted the temperature insensitivity of the threshold current. With advances in growth technology, the predicted characteristics were demonstrated in 2004, and high-temperature operation up to 220°C became possible in 2011. Currently, quantum dot lasers are positioned as a promising light source for silicon photonics, especially in terms of their ability to operate at high temperatures in co-packaged optical technology. In this talk, I will describe the historical development of quantum dot lasers and their integration into 5 mm square silicon-based transceiver chips, as well as the direct epitaxial growth of quantum lasers on silicon. The talk will also demonstrate the integration of quantum dot-based light sources, including single-photon sources, on silicon integrated circuits using transfer printing methods.
Invited
ID: 130 / TOM1 S1: 2
TOM 1 Silicon Photonics and Integrated Optics
Invited - Broadband wavelength conversion in Si-rich silicon nitride waveguides based on intermodal four-wave mixing
1Electrical, Computer and Biomedical Engineering Department, University of Pavia, Pavia, 27100, Italy; 2Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom; 3Telecommunication Research Institute (TELMA), Universidad de Málaga, CEI Andalucía TECH, Málaga, 29010, Spain; 4School of Science and Technology, Nottingham Trent University, Nottingham, NG11 8NS, United Kingdom; 5Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands; 6Department of Materials Science and Engineering, University of Ioannina, Ioannina, 45110, Greece; 7Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, CNRS, Palaiseau, 91120, France; 8Advanced Electronics and Photonics Research Center, National Research Council Canada, Ottawa, ON K1A 0R6, Canada
All-optical wavelength converters and frequency synthesizers represent essential components for the development of advanced and reconfigurable optical communications systems. In this respect, the exploitation of intermodal nonlinear processes in integrated multimode waveguides has received significant attention in recent years for all-optical processing applications. Here, we discuss our recent results on the realization of fully-integrated and broadband wavelength converters utilizing the Bragg scattering intermodal four-wave mixing nonlinear process in a silicon-rich silicon nitride platform.
ID: 292 / TOM1 S1: 3
TOM 1 Silicon Photonics and Integrated Optics
Structural and optical characterization of hole-doped Ge/SiGe multiple quantum wells for mid-infrared photonics
1Politecnico di Milano, Italy; 2Forschungszentrum Jülich, Germany; 3Università di Pisa, Italy
The structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.