Conference Agenda

More than forty years ago, in 1982, we proposed the concept of quantum dot lasers and at the same time theoretically predicted the temperature insensitivity of the threshold current. With advances in growth technology, the predicted characteristics were demonstrated in 2004, and high-temperature operation up to 220°C became possible in 2011. Currently, quantum dot lasers are positioned as a promising light source for silicon photonics, especially in terms of their ability to operate at high temperatures in co-packaged optical technology. In this talk, I will describe the historical development of quantum dot lasers and their integration into 5 mm square silicon-based transceiver chips, as well as the direct epitaxial growth of quantum lasers on silicon. The talk will also demonstrate the integration of quantum dot-based light sources, including single-photon sources, on silicon integrated circuits using transfer printing methods.

All-optical wavelength converters and frequency synthesizers represent essential components for the development of advanced and reconfigurable optical communications systems. In this respect, the exploitation of intermodal nonlinear processes in integrated multimode waveguides has received significant attention in recent years for all-optical processing applications. Here, we discuss our recent results on the realization of fully-integrated and broadband wavelength converters utilizing the Bragg scattering intermodal four-wave mixing nonlinear process in a silicon-rich silicon nitride platform.

The structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.

In this contribution, we will present our latest work around on-chip spectroscopy and sensing, using either silicon (Si) or silicon nitride (SiN) Photonic Integrated Circuits (PICs). The potential of such sophisticated, yet inexpensive approaches significantly improves the prospect of being able to deliver improvements in e.g. healthcare and security applications. This talk will highlight a number of specific examples of our recent work, including a hybrid (2D-graphene oxide, GO) integrated Si MRR, operating around 1550nm and capable of the sensitive detection of a range of vapour phase volatile organic compounds (VOCs), a hybrid (2D-graphene) integrated SiN device, operating around 800nm, capable of waveguide-based evanescent excitation/collection of Raman scattered light and a compact spectrometer based on a disordered Si multi-mode interferometer (MMI), with a spatial- and spectral-dependent speckle pattern that enables us to reproducing arbitrary input signals

In this presentation, I will provide an overview of the different technologies used to integrate III-V materials on silicon photonics to develop on-chip lasers, amplifiers and electro-absorption modulators. I will also discuss the challenges associated with each integration technology supported by different use-cases. Finally, I will share my vision on the existing opportunities for these emerging technologies to increase their maturity and readiness level for industrialization.

On-chip optical cavities play a crucial role in communications, sensing, quantum and nonlinear optics applications. State-of-the-art implementations are limited by trade-offs between quality factor and free-spectral range (FSR). Here, we introduce a novel approach for implementing topological photonic cavities by leveraging Zak phase engineering of Bragg gratings in silicon waveguides. We demonstrate cavities with a single resonance and a higher quality factor Q compared to of conventional Fabry-Pérot cavities, while at the same time overcoming FSR limitation of the latter.

The article presents an innovative approach to confining waves in planar high contrast grating hollow core waveguides, design achieves a surface that reflects waves effectively while maintaining a structure that allows for high transmission. The unique side-opened waveguide system also allows for gas flow through the sidewalls, making it uniquely suitable for gas spectroscopic techniques. The HCW design is specifically tailored for methane gas sensing at a wavelength of 3.27 µm. Numerical analysis shows that the transmittance can reach up to -0.41 dB. These findings demonstrate the potential of high-transmitting hollow-core waveguides for gas sensing, highlighting the effectiveness and cost-efficiency of chip-scale photonic integration in addressing energy and environmental challenges.