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Session Overview
Session
TOM1 S05: Emerging applications/devices
Time:
Thursday, 14/Sept/2023:
5:00pm - 6:30pm

Session Chair: Hon Ki Tsang, The Chinese University of Hong Kong, Hong Kong S.A.R. (China)
Location: Santenay/Chablis


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Presentations
5:00pm - 5:30pm
Invited
ID: 396 / TOM1 S05: 1
TOM 1 Silicon Photonics and Integrated Optics

Hybrid Integration of MEMS and PICs for Inertial Sensing

Ying Lia Li, Aaron Geisberger, Ning Zhang, David Payne, Sergejs Leonovs

Zero Point Motion, United Kingdom

At Zero Point Motion we create low noise chipscale optical inertial sensors by combining photonic integrated circuit (PIC) structures with micro-electro-mechanical systems (MEMS) mechanical structures. Our technology is derived from cavity optomechanics which uses the coupling between optical resonances and mechanical motion to detect picometer to femtometre displacements, producing lower noise readout compared with capacitive devices. Our platform comprises ring resonators with whispering gallery mode resonances, that are evanescently coupled to the motion of MEMS accelerometer and vibratory gyroscope test-mass. We report on progress in realising an integrated device, with both MEMS and PIC structures die-to-die bonded and then packaged with light sources and detectors on-chip.



5:30pm - 5:45pm
ID: 424 / TOM1 S05: 2
TOM 1 Silicon Photonics and Integrated Optics

Photonic-chip integrated large-mode-area high-power CW optical amplifier

Mahmoud A. Gaafar1, Kai Wang2, Markus Ludwig1, Thibault Wildi1, Jan Lorenzen1, Henry Francis3, Michael Geiselmann3, Milan Sinobad1, Franz X. Kärtner1,4, Sonia M. Garcia-Blanco2, Neetesh Singh1, Tobias Herr1,4

1Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany; 2Integrated Optical Systems, MESA+ Institute for Nanotechnology, University of Twente, 7500AE, Enschede, The Netherlands; 3LIGENTEC SA, Switzerland CH-1024 Ecublens, Switzerland; 4Physics Department, Universität Hamburg UHH, Luruper Chaussee 149, 22761 Hamburg, Germany

Here, we report on a CMOS-compatible thulium-doped high power continuous wave (CW) optical amplifier, leveraging large mode-area gain waveguides. The amplifier structure combines a silicon nitride waveguide

above which a sputtered 1250 nm-thick thulium-doped alumina gain layer is deposited. We demonstrate > 220 mW output signal power at center wavelength of 1850 nm inside a 9-cm-long amplifier. Small signal gain of > 15 dB is achieved.



5:45pm - 6:00pm
ID: 395 / TOM1 S05: 3
TOM 1 Silicon Photonics and Integrated Optics

Polarization rotation using Molybdenum trioxide in 3µm SOI platform

Dura Shahwar1,2, Susobhan Das2, Matteo Cherchi3, Gius MD Uddin2, Zhipei Sun2, Timo Aalto1

1VTT technical research centre of Finland, Finland; 2Aalto University, Finland; 3Xanadu, Canada

We propose a novel polarization rotator concept using two-dimensional (2D) anisotropic materials, such as molybdenum trioxide, on top of 3 µm silicon waveguides. The in-plane anisotropic behavior of 500 nm thick MoO3 flake is analyzed and confirmed with Raman spectroscopy.



6:00pm - 6:15pm
ID: 416 / TOM1 S05: 4
TOM 1 Silicon Photonics and Integrated Optics

Pulsed heterodyne interferometry for nonlinear SOI waveguide characterization

Rajath Sawant1, Meryem Ibnoussina1, Pierre Colman1, Jean-Baptiste Jager3, Benoit Charbonnier2, Pierre Noe2, Aurélien Coillet1, Benoit Cluzel1

1ICB, Universite de Bourgogne, France; 2Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 38000 Grenoble, France; 3Université Grenoble Alpes, CEA, IRIG, MINATEC Campus, 38000 Grenoble, France

Silicon waveguides are a promising candidate for integrated nonlinear optics applications. Nonlinear coefficients of Silicon on Insulator (SOI) waveguides have been previously measured using techniques such as Z-scan, D-scan, Four Wave Mixing (FWM) and Self-phase modulation. However, they have several drawbacks such as they operate at high power or are cumbersome to setup and require multiple measurements to determine all the coefficients. In this work, we develop a direct and single measurement technique to characterize the nonlinear processes in SOI waveguides. This is achieved by employing a heterodyne interferometric technique to accurately measure minute nonlinear response. The measured nonlinear amplitude and phase shifts at 1550 nm wavelength are fit to extract third-order nonlinear coefficients of Two-photon absorption, Kerr nonlinear index, Free carrier absorption and Free carrier dispersion. The obtained coefficients for SOI waveguides are close to that found in literature measured using the above mentioned techniques. The advantages of this method include easy interpretation of the output signal and relatively low power of operation. It is especially advantageous for studying materials such as Phase Change Materials (PCM) in which phase changes occur dynamically. This aspect is quite promising for characterizing emerging materials for integrated photonics applications.



6:15pm - 6:30pm
ID: 371 / TOM1 S05: 5
TOM 1 Silicon Photonics and Integrated Optics

Trajectory tracing dynamics in anisotropic microcavities

Martina Hentschel, Lukas Seemann

Institute of Physics, TU Chemnitz, Germany

Ray-wave correspondence has proven a powerful tool in mesoscopic optics, in particular in the description of deformed microdisc cavities with a versatile application potential ranging from microlasers to sensors. New material classes such as graphene-based systems have enriched the field by adding Dirac Fermion optics as well as anisotropic material properties as further system parameters. The trigonally warped dispersion relation in bilayer-graphene billiards generalizes the concept of birefringence and opens unconventional ways of trajectory control in the interplay of dispersion relation and the cavity geometry as we illustrate in this contribution.



 
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