Session | ||
TOM1 S03: Materials I
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Presentations | ||
8:30am - 9:00am
Invited ID: 532 / TOM1 S03: 1 TOM 1 Silicon Photonics and Integrated Optics Advanced applications of optical microcombs Swinburne University, Australia I will review our recent work in advanced applications of optical microcombs to optical neural networks, optical communications and other areas. 9:00am - 9:15am
ID: 357 / TOM1 S03: 2 TOM 1 Silicon Photonics and Integrated Optics Aluminum nitride on insulator: Material and processing optimization for integrated photonic applications 1Silicon Austria Labs GmbH, Austria; 2Ecole Polytehcnique Fédérale de Lausanne, Switzerland; 3The University of Sydney, Australia Thin film aluminum nitride on insulator (AlNOI) has gained attention as a promising material platform for integrated photonic circuits (PICs) due to its ability to operate over a wide spectral range covering the ultra-violet to mid-infrared regions, while enabling a broad range of passive photonic functionalities. This study aims to optimize sputtered AlNOI films for PICs, with an emphasis on the spectroscopic ellipsometry study over a range from 0.19 µm to 25 µm. Furthermore, we discuss our approach for fabricating AlNOI PICs components, with a particular focus on optimizing the etching process to attain smooth sidewall waveguides. 9:15am - 9:30am
ID: 420 / TOM1 S03: 3 TOM 1 Silicon Photonics and Integrated Optics Near-infrared photodetectors based on embedded graphene 1Institute of Applied Science and Intelligent Systems “Eduardo Caianiello” (CNR); 2Institute for Microelectronics and Microsystems (CNR); 3University of Campania "Luigi Vanvitelli" In last years, the introduction of 2-dimensional materials such as graphene has revolutionized the world of silicon photonics. In this work, we demonstrate a new approach for integrating graphene into silicon-based photodetectors. We leverage a thin film of hydrogenated amorphous silicon to embed the graphene within two different photonic structures, an optical Fabry-Perot microcavity, and a waveguide, achieving a stronger light-matter interaction. The investigated devices have shown promising performance resulting in responsivities as high as 27 mA/W and 0.15 A/W around 1550 nm, respectively. 9:30am - 10:00am
Invited ID: 240 / TOM1 S03: 4 TOM 1 Silicon Photonics and Integrated Optics Advancements in waveguide architectures using high-performance silica-on-silicon platform Enablence Technologies Inc., Canada Novel applications in optical coherence tomography (OCT) and LiDAR systems have become possible due to performance characteristics of a state-of-the-art silica-on-silicon planar lightwave circuit (PLC) platform. We have achieved ultra-low propagation losses of <0.009 dB/cm with unmatched phase control in a polarization-insensitive way, enabling a range of real-time advanced vision and imaging applications utilizing k-clocks and analog frequency sampling architectures. 10:00am - 10:30am
Invited ID: 531 / TOM1 S03: 5 TOM 1 Silicon Photonics and Integrated Optics Development of 905nm SiN-based integrated optical phased arrays for LIDAR CEA-Leti, France We describe a selection of work carried out within the ECSEL-VIZTA European research project concerning the development of an integrated solid-state 905nm time-of-flight (TOF) LIDAR device. Pseudo two-dimensional, single wavelength beam steering from a 7x32 channel silicon nitride-based optical phased array was achieved, with optimized single-pass thermo-optic phase shifters with Pπ = 30mW. Direct optical coupling of a photonic chip to a 7 W tapered GaInAsP laser diode is also shown to suggest a pathway to achieving medium-to long-range integrated LIDAR using a low-cost light source. |