8:30am - 9:00amInvitedID: 539
/ TOM1 S01: 1
TOM 1 Silicon Photonics and Integrated Optics
Monolithic compound integration and trimming schemes for CMOS photonics
Frederic Gardes
Southampton University, United Kingdom
We present the experimental demonstration of the integration of group IV and III/V quantum well and quantum dot structures to silicon nitride, the co-integration of phase change materials on silicon nitride and post fabrication trimming capability of silicon nitride structures.
9:00am - 9:15amID: 337
/ TOM1 S01: 2
TOM 1 Silicon Photonics and Integrated Optics
Quasi-phase-matched dispersive wave for super continuum generation in Si3N4 waveguide
Yijun Yang1, Victor Turpaud1, Christian Lafforgue1, Quentin Wilmart2, Daniele Melati1, Eric Cassan1, Delphine Marris-Morini1, Carlos Alonso-Ramos1, Bertrand Szelag2, Laurent Vivien1
1Univ. Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies(C2N), 91120 Palaiseau, France; 2Univ. Grenoble Alpes, CEA, LETI, Grenoble, 38000, France
In this paper, we present controllable and efficient supercontinuum generation with multiple dispersive waves exploiting the quasi-phase-matching (QPM) condition in Si3N4 waveguide. The frequency component needed by QPM condition is introduced by varying the width of the waveguide through propagation. We demonstrated that integrated photonics is an ideal platform to apply QPM strategy, offering new opportunities to tailor the dispersive wave.
9:15am - 9:30amID: 126
/ TOM1 S01: 3
TOM 1 Silicon Photonics and Integrated Optics
Supercontinuum generation in ICP-CVD silicon-rich silicon nitride waveguides
Ayesha Jayantha, Aurore Andrieux, Isabelle Gallet, Christophe Finot, Kamal Hammani
Universty of Bourgogne, France
Inductively coupled plasma chemical vapor deposition was used to obtain thin films of silicon-rich silicon nitride with a refractive index of 2.44 at optical telecommunications wavelength. The resulting layer was patterned into a 1.6 μm wide waveguide and tested for its nonlinear behavior using a 90-fs all-fiber laser centered at 1630 nm. A significant spectral broadening is demonstrated with a supercontinuum generation from 1300 nm to 1985 nm. Simulations are in fair agreement with the experiments, assuming a nonlinear index of 2 x 10-18 m2/W.
9:30am - 9:45amID: 406
/ TOM1 S01: 4
TOM 1 Silicon Photonics and Integrated Optics
Pulley Couplers for broadband Microcomb Generation in Si3N4 Ring Resonators
Bastian Ruhnke1, Thibault Wildi1, Alexander Ulanov1, Tobias Herr1,2
1Deutsches Elektronen-Synchrotron DESY, Germany; 2Physics Department, Universitat Hamburg UHH
Microresonator solitons enable high repetition-rate optical frequency combs. Their spectral span
scales inversely with the strength of the resonator’s anomalous group velocity dispersion. In a thick (800 nm) silicon nitride platform, wide resonator waveguides (>2 µm) with weak anomalous dispersion are especially promising for the generation of broadband spectra. As wider waveguides have a weaker evanescent field, the coupling strength to their bus waveguide is reduced. To address this challenge, alternative coupler designs, such as pulley couplers are required. Here, we investigate pulley couplers for wide waveguide specifically targeted at broadband soliton generation. We observe significant improvement of the coupling ideality compared to conventional coupler geometries and broadband four-wave mixing spectra are observed in 2.8 µm wide
microresonators.
9:45am - 10:00amID: 322
/ TOM1 S01: 5
TOM 1 Silicon Photonics and Integrated Optics
Efficient single-etch surface grating couplers in silicon nitride platforms for telecom and datacom wavebands
Radovan Korcek1, William Fraser2, David Medina Quiroz3, Pavel Cheben4, Samson Edmond3, Jens H. Schmid4, Maziyar Milanizadeh4, Carlos Alonso-Ramos3, Laurent Vivien3, Winnie N. Ye2, Daniel Benedikovic1,5
1University of Žilina, Slovak Republic; 2Carleton University, Canada; 3Centre de Nanosciences et de Nanotechnologies, CNRS, Universite Paris-Saclay, France; 4National Research Council Canada, Canada; 5University Science Park, University of Žilina, Slovak Republic
We present designs and experiments of single-etched amorphous silicon (α-Si) surface grating couplers on a silicon nitride (SiN) waveguide, operating at the telecom (C-band) and datacom (O-band) wavebands. SiN-only grating couplers demonstrate experimental coupling loss of -3.9 dB at 1.55 μm wavelength with a 1-dB bandwidth of 37 nm. Utilizing the hybrid α-Si/SiN platform with subwavelength grating structure, we obtain improved coupling performances, with the optimized fiber-chip coupling loss of -2.0 dB and a 1-dB spectral bandwidth of 42 nm centered at 1.31 μm.
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