Conference Agenda

Session
TOM1 S01: Silicon Photonics and Guided-Wave Optics
Time:
Tuesday, 13/Sept/2022:
4:30pm - 6:00pm

Session Chair: Pavel Cheben, NRC, Canada
Location: B116

1st floor, 70 seats

Presentations
4:30pm - 5:00pm
Invited
ID: 380 / TOM1 S01: 1
TOM 1 Silicon Photonics and Guided-Wave Optics

Subwavelength silicon nanostructuration for optomechanical applications

Carlos Alonso Ramos

CNRS, University Paris Saclay, France

Subwavelength silicon nanostructuration for optomechanical applications



5:00pm - 5:15pm
ID: 220 / TOM1 S01: 2
TOM 1 Silicon Photonics and Guided-Wave Optics

Bi-directional spectral broadening measurements for accurate characterisation of nonlinear hybrid integrated waveguides

Mikhail Dyatlov1,2, Philippe Delaye3, Laurent Vivien2, Nicolas Dubreuil1

1LP2N, Institut d’Optique Graduate School, CNRS, Université de Bordeaux, 33400 Talence, France; 2Université Paris-Saclay, CNRS, Centre de nanosciences et de nanotechnologies (C2N), 91120 Palaiseau, France; 3LCF, Institut d’Optique Graduate School, CNRS, Université Paris-Saclay, 91127 Palaiseau Cedex, France

The emerging interest in integrated optical technologies raises the need for precise characterisation techniques for waveguides presenting nonlinearities. Here we propose a non-interferometric measurement to accurately characterise the Kerr contribution in hybrid waveguides and illustrate its performances using SiN waveguides with a GSS chalcogenide top-layer. The sensitivity of our technique in terms of nonlinear phase reaches 10 mrad and its accuracy makes possible to extract the nonlinear contributions from the top-layer.



5:15pm - 5:30pm
ID: 148 / TOM1 S01: 3
TOM 1 Silicon Photonics and Guided-Wave Optics

Fabrication and optical characterization of erbium-doped silicon diode for quantum communication applications

Giulio Tavani1, Giorgia Franzò2, Michele Castriotta3, Giorgio Ferrari4, Francesco Picciariello5, Giulio Foletto5, Constantino Agnesi5, Paolo Villoresi5, Giuseppe Vallone5, Davide Rotta6, Chiara Barri1, Erfan Mafakheri7, Michele Celebrano4, Marco Finazzi4, Monica Bollani7, Enrico Prati8,9

1L-NESS, Dip. Di Fisica del Politecnico di Milano, I–22100 Como, Italy; 2CNR-IMM, Via Santa Sofia 64, I–95123 Catania, Italy; 3Dip. di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milano Italy; 4Dip. di Fisica, Politecnico di Milano, I–20133 Milano Italy; 5Dip. di Ingegneria dell’Informazione, Università degli Studi di Padova, via Gradenigo 6B, IT-35131 Padova, Italy; 6InPhoTec, Integrated Photonic Technologies Foundation, I–56124 Pisa, Italy; 7IFN-CNR, L-NESS laboratory, 22100 Como, Italy; 8Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I–20133 Milano, Italy; 9Dip. di Fisica “Aldo Pontremoli”, Università degli Studi di Milano, Via Celoria 16, I–20133 Milano, Italy

Quantum Key Distribution allows two users to exchange secret keys and it is based on the transmission of single photons or attenuated laser pulses. Recently, sources based on multiple single-photon emitters

were demonstrated to be suitable for QKD. Here, we present a CMOS compatible multiple single-photon emitters source realized on a SOI wafer by a standard silicon diode doped with erbium ions. Particular emphasis

is placed on the fabrication of such a device enhancing the erbium electroluminescence signal by adopting a

proper oxygen co-doping. Finally, electroluminescence characterization at room temperature of the device is

presented.