Conference Agenda

Topical Meetings and Sessions:

TOM 1 - Silicon Photonics and Guided-Wave Optics
TOM 2 - Computational, Adaptive and Freeform Optics
TOM 3 - Optical System Design, Tolerancing and Manufacturing
TOM 4 - Bio-Medical Optics
TOM 5 - Resonant Nanophotonics
TOM 6 - Optical Materials: crystals, thin films, organic molecules & polymers, syntheses, characterization and applications
TOM 7 - Thermal radiation and energy management
TOM 8 - Non-linear and Quantum Optics
TOM 9 - Opto-electronic Nanotechnologies and Complex Systems
TOM 10 - Frontiers in Optical Metrology
TOM 11 - Tapered optical fibers, from fundamental to applications
TOM 12 - Optofluidics
TOM 13 - Advances and Applications of Optics and Photonics
EU Project Session
Early Stage Researcher Session

More information on the Topical Meetings

Select a date or location to show only sessions at that day or location. Select a single session for a detailed view (with abstracts and downloads when you are logged in as a registered attendee). The rest of the TOM sessions, EU project session, tutorials, and Early Stage Researcher session will be updated soon. Thank you for your patience!

 
 
Session Overview
Session
TOM1 S04: Silicon Photonics and Guided-Wave Optics
Time:
Wednesday, 14/Sept/2022:
4:30pm - 6:00pm

Session Chair: Andrea Melloni, Politecnico di Milano, Italy
Location: B116

1st floor, 70 seats

Presentations
4:30pm - 5:00pm
Invited
ID: 310 / TOM1 S04: 1
TOM 1 Silicon Photonics and Guided-Wave Optics

Multi-objective design of photonic devices and metamaterials

Daniele Melati

Université Paris-Saclay, France

High performance and large-scale integration are driving the design of innovative photonic devices based on non-trivial shapes and metamaterials. In this scenario, multiple figures of merit must necessarily be considered in the evaluation of the device performance, e.g., losses, bandwidth, footprint, or tolerance to fabrication uncertainty. In this invited talk we will present our recent work on the use of machine learning and optimization tools for the development of photonic components with high performance and advanced functionalities.



5:00pm - 5:30pm
Invited
ID: 153 / TOM1 S04: 2
TOM 1 Silicon Photonics and Guided-Wave Optics

Ultra-dense interferometric chain architecture for datacom and telecom applications

Serge Bidnyk, Ksenia Yadav, Ashok Balakarishnan

Enablence Technologies Inc., Canada

Further increase in the density of integrated planar lightwave circuits (PLCs) depends on the introduction of compact guided-wave layout solutions. We describe a novel architecture for coiling multistage interferometric devices with densities reaching the theoretical limit. Our approach is validated by the design, fabrication, and deployment of state-of-the-art PLCs based on the proposed architecture for use in datacom and telecom applications.



5:30pm - 5:45pm
ID: 319 / TOM1 S04: 3
TOM 1 Silicon Photonics and Guided-Wave Optics

Ultra-low-loss silicon nitride waveguide for supercontinuum generation

Yijun Yang1, Christian Lafforgue1, Quentin Wilmart2, Thibaut Sylvestre3, Sylvain Guerber2, Xavier Le Roux1, Eric Cassan1, Delphine Marris-Morini1, Carlos Alonso-Ramos1, Bertrand Szelag2, Laurent Vivien1

1Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies (C2N),91120 Palaiseau, France; 2Univ. Grenoble Alpes, CEA, LETI, Grenoble, 38000, France; 3Institut FEMTO-ST, Université Bourgogne Franche-Comté CNRS UMR 6174, 25000, Besançon, France

In this paper, we present the generation of supercontinuum in ultra-low loss silicon nitride waveguides fabricated in 200mm wafer. The waveguide was pumped at its maximum group velocity dispersion(GVD) wavelength. Both experimental and simulation results are presented and compared. We observed a rather flat and symmetric spectrum expansion over 1.3 octave from visible to near IR wavelength range with a pump pulse energy lower than 65pJ.



5:45pm - 6:00pm
ID: 211 / TOM1 S04: 4
TOM 1 Silicon Photonics and Guided-Wave Optics

III-V Compound Semiconductor Membrane Quantum Well Waveguide Lasers emitting at 1 μm

Stephen C. Richardson1, Jonathan R. C. Woods2, Jake Daykin1, Jon Gorecki3, Roman Bek4, Nicholas T. Klokkou1, James S. Wilkinson5, Michael Jetter6, Vasileios Apostolopoulos1

1School of Physics and Astronomy, University of Southampton, Southampton, SO17 1BJ; 2Aquark Technologies, Abbey Enterprise Centre Premier Way, Abbey Park Industrial Estate, Romsey, SO51 9AQ; 3School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London, E1 4NS; 4Twenty-One Semiconductors GmbH, Kiefernweg 4, 72654 Neckartenzlingen, Germany; 5Zepler Institute, University of Southampton, Southampton, SO17 1BJ; 6Institute for Semiconductor Optics and Functional Interfaces, University of Stuttgart, 70569 Stuttgart, Germany

We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was also observed and demonstrated.