Conference Agenda

Topical Meetings and Sessions:

TOM 1 - Silicon Photonics and Guided-Wave Optics
TOM 2 - Computational, Adaptive and Freeform Optics
TOM 3 - Optical System Design, Tolerancing and Manufacturing
TOM 4 - Bio-Medical Optics
TOM 5 - Resonant Nanophotonics
TOM 6 - Optical Materials: crystals, thin films, organic molecules & polymers, syntheses, characterization and applications
TOM 7 - Thermal radiation and energy management
TOM 8 - Non-linear and Quantum Optics
TOM 9 - Opto-electronic Nanotechnologies and Complex Systems
TOM 10 - Frontiers in Optical Metrology
TOM 11 - Tapered optical fibers, from fundamental to applications
TOM 12 - Optofluidics
TOM 13 - Advances and Applications of Optics and Photonics
EU Project Session
Early Stage Researcher Session

More information on the Topical Meetings

Select a date or location to show only sessions at that day or location. Select a single session for a detailed view (with abstracts and downloads when you are logged in as a registered attendee). The rest of the TOM sessions, EU project session, tutorials, and Early Stage Researcher session will be updated soon. Thank you for your patience!

Please note that all times are shown in the time zone of the conference. The current conference time is: 3rd Dec 2022, 10:21:49am WET

 
 
Session Overview
Session
TOM1 S01: Silicon Photonics and Guided-Wave Optics
Time:
Tuesday, 13/Sept/2022:
4:30pm - 6:00pm

Session Chair: Pavel Cheben, NRC, Canada
Location: B116

1st floor, 70 seats

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Presentations
4:30pm - 5:00pm
Invited
ID: 380 / TOM1 S01: 1
TOM 1 Silicon Photonics and Guided-Wave Optics

Subwavelength silicon nanostructuration for optomechanical applications

Carlos Alonso Ramos

CNRS, University Paris Saclay, France

Subwavelength silicon nanostructuration for optomechanical applications



5:00pm - 5:15pm
ID: 220 / TOM1 S01: 2
TOM 1 Silicon Photonics and Guided-Wave Optics

Bi-directional spectral broadening measurements for accurate characterisation of nonlinear hybrid integrated waveguides

Mikhail Dyatlov1,2, Philippe Delaye3, Laurent Vivien2, Nicolas Dubreuil1

1LP2N, Institut d’Optique Graduate School, CNRS, Université de Bordeaux, 33400 Talence, France; 2Université Paris-Saclay, CNRS, Centre de nanosciences et de nanotechnologies (C2N), 91120 Palaiseau, France; 3LCF, Institut d’Optique Graduate School, CNRS, Université Paris-Saclay, 91127 Palaiseau Cedex, France

The emerging interest in integrated optical technologies raises the need for precise characterisation techniques for waveguides presenting nonlinearities. Here we propose a non-interferometric measurement to accurately characterise the Kerr contribution in hybrid waveguides and illustrate its performances using SiN waveguides with a GSS chalcogenide top-layer. The sensitivity of our technique in terms of nonlinear phase reaches 10 mrad and its accuracy makes possible to extract the nonlinear contributions from the top-layer.



5:15pm - 5:30pm
ID: 148 / TOM1 S01: 3
TOM 1 Silicon Photonics and Guided-Wave Optics

Fabrication and optical characterization of erbium-doped silicon diode for quantum communication applications

Giulio Tavani1, Giorgia Franzò2, Michele Castriotta3, Giorgio Ferrari4, Francesco Picciariello5, Giulio Foletto5, Constantino Agnesi5, Paolo Villoresi5, Giuseppe Vallone5, Davide Rotta6, Chiara Barri1, Erfan Mafakheri7, Michele Celebrano4, Marco Finazzi4, Monica Bollani7, Enrico Prati8,9

1L-NESS, Dip. Di Fisica del Politecnico di Milano, I–22100 Como, Italy; 2CNR-IMM, Via Santa Sofia 64, I–95123 Catania, Italy; 3Dip. di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milano Italy; 4Dip. di Fisica, Politecnico di Milano, I–20133 Milano Italy; 5Dip. di Ingegneria dell’Informazione, Università degli Studi di Padova, via Gradenigo 6B, IT-35131 Padova, Italy; 6InPhoTec, Integrated Photonic Technologies Foundation, I–56124 Pisa, Italy; 7IFN-CNR, L-NESS laboratory, 22100 Como, Italy; 8Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I–20133 Milano, Italy; 9Dip. di Fisica “Aldo Pontremoli”, Università degli Studi di Milano, Via Celoria 16, I–20133 Milano, Italy

Quantum Key Distribution allows two users to exchange secret keys and it is based on the transmission of single photons or attenuated laser pulses. Recently, sources based on multiple single-photon emitters

were demonstrated to be suitable for QKD. Here, we present a CMOS compatible multiple single-photon emitters source realized on a SOI wafer by a standard silicon diode doped with erbium ions. Particular emphasis

is placed on the fabrication of such a device enhancing the erbium electroluminescence signal by adopting a

proper oxygen co-doping. Finally, electroluminescence characterization at room temperature of the device is

presented.