Conference Agenda

Topical Meetings and Sessions:

TOM 1 - Silicon Photonics and Guided-Wave Optics
TOM 2 - Computational, Adaptive and Freeform Optics
TOM 3 - Optical System Design, Tolerancing and Manufacturing
TOM 4 - Bio-Medical Optics
TOM 5 - Resonant Nanophotonics
TOM 6 - Optical Materials: crystals, thin films, organic molecules and polymers, syntheses, characterization and devices
TOM 7 - Thermal radiation and energy management
TOM 8 - Nonlinear and Quantum Optics
TOM 9 - Optics at Nanoscale (ONS)
TOM 10 - Optical Microsystems (OMS)
TOM 11 - Waves in Complex Photonic Media
TOM 12 - Optofluidics
TOM 13 - Ultrafast Optical Technologies and Applications
TOM 14 - Advances and Applications of Optics and Photonics
EU Project Session
Early Stage Researcher Session organised by SIOF
Grand Challenges of Photonics Session

More information on the Topical Meetings

Select a date or location to show only sessions at that day or location. Select a single session for detailed view (with abstracts and downloads when you are logged in as registered attendee). Plenary speeches, tutorials, and Early Researcher session will be updated very soon. Thank you for your patience!

Session Overview
TOM13 S07: Ultrafast: Ultrafast oscillators
Tuesday, 14/Sept/2021:
16:15 - 17:45

Session Chair: Catherine Yuriko Teisset, TRUMPF Scientific Lasers, Germany
Location: Aula 1

1st floor

16:15 - 16:30
ID: 292 / TOM13 S07: 1
TOM 13 Ultrafast Optical Technologies and Applications

100-W, 100-MW, 50-fs thin-disk laser oscillator based on Yb:YAG

Jakub Drs, Julian Fischer, Norbert Modsching, François Labaye, Valentin J. Wittwer, Thomas Südmeyer

University of Neuchâtel, Switzerland

We demonstrate an Yb:YAG thin-disk laser oscillator operating in the self-phase modulation broadened regime. The laser delivers 100 W of average power in 50-fs pulses at 17-MHz repetition rate with an optical-to-optical efficiency of 25%.

16:30 - 16:45
ID: 421 / TOM13 S07: 2
TOM 13 Ultrafast Optical Technologies and Applications

Towards 2-µm high-power ultrafast thin-disk lasers

Yicheng Wang1, Sergei Tomilov1, Martin Hoffmann1, Jonas Heidrich2, Behçet Özgür Alaydin2, Matthias Golling2, Ursula Keller2, Clara J. Saraceno1

1Photonics and Ultrafast Laser Science, Ruhr Universität Bochum, Universitätsstraße 150, 44801 Bochum, Germany; 2Department of Physics, Institute for Quantum Electronics, ETH Zürich, Auguste-Piccard-Hof 1, 8093 Zürich, Switzerland

High power ultrafast laser systems directly emitting in the short-wavelength infrared region (1.4-3 µm) has seen strong interest, due to applications in science and technology. Among different laser technologies, the development of 2-µm thin-disk lasers is very promising for power and energy scaling. Recently, we have demonstrated record results with Ho:YAG thin-disk oscillator, delivering 112-W CW power, and 40.5-W modelocked operation with 1.66-ps pulse duration at 52.2-MHz. Here we would like to briefly review the recent achievements of 2-µm thin-disk lasers and discuss the potential development and applications.

16:45 - 17:00
ID: 374 / TOM13 S07: 3
TOM 13 Ultrafast Optical Technologies and Applications

Few-cycle pulses from efficient Yb-doped solid-state lasers

Francois Labaye1, Valentin J. Wittwer1, Marin Hamrouni1, Norbert Modsching1, Eric Cormier2,3, Thomas Südmeyer1

1Laboratoire Temps-Fréquence, Institut de Physique, Université de Neuchâtel; 2Laboratoire Photonique, Numérique et Nanosciences, CNRS-IOGS-Université Bordeaux; 3Institut Universitaire de France (IUF)

We present a novel pumping scheme relying on cross-polarization that overcomes previous bandwidth and efficiency limitations. Implementing this pumping scheme in a soft-aperture Kerr-lens mode-locked laser oscillator based on Yb:CALGO, we demonstrate more than one order of magnitude higher optical-to-optical efficiency compared to previous few-cycle laser oscillators based on Yb-doped gain materials operating in the sub-30-fs pulse duration regime.

17:00 - 17:15
ID: 234 / TOM13 S07: 4
TOM 13 Ultrafast Optical Technologies and Applications

Femtosecond middle IR lasers and frequency combs based on polycrystalline Cr:ZnS

Sergey Vasilyev1, Viktor Smolski1, Jeremy Peppers1, Igor Moskalev1, Mike Mirov1, Yury Barnakov1, Sergey Mirov1,3, Valentin Gapontsev2

1IPG Photonics, Southeast Technology Center, AL, USA; 2IPG Photonics Corporation, MA, USA; 3University of Alabama at Birmingham, AL, USA

We report an approach to generation of femtosecond pulses and optical frequency combs in the 2 – 20 µm spectral range. The laser architecture is based on a combination of laser and nonlinear interactions in polycrystalline Cr:ZnS media that enables simultaneous amplification of ultrashort pulses, nonlinear pulse compression to 2-optical-cycle, and nonlinear broadening of pulses’ spectrum to an optical octave. This has allowed us to implement robust and reliable shoe-box sized middle-IR frequency combs with ultra-low timing jitter of the pulse trains, broad instantaneous spectra, and Watt-level average power.

17:15 - 17:30
ID: 266 / TOM13 S07: 5
TOM 13 Ultrafast Optical Technologies and Applications

2.4-µm SESAM modelocked high-power repetition rate scalable femtosecond Cr:ZnS oscillator

Ajanta Barh, B. Ozgur Alaydin, Jonas Heidrich, Marco Gaulke, Matthias Golling, Christopher R. Phillips, Ursula Keller

ETH Zürich, Switzerland

We present InGaSb/GaSb quantum well based high-quality SESAM at infrared wavelength of 2.4 µm. Using the SESAM we demonstrate self-starting soliton modelocking of Cr:ZnS oscillators delivering 155-fs pulses at record-high 2 GHz repetition rate and short pulses of only 79-fs at 250 MHz repetition rate, both at a high average output power of 0.8 W.

17:30 - 17:45
ID: 260 / TOM13 S07: 6
TOM 13 Ultrafast Optical Technologies and Applications

Development and optical characterization of 2.1-μm SESAMs optimized for high-power operation in Ho-doped lasers

Jonas Heidrich, Marco Gaulke, B. Ozgur Alaydin, Matthias Golling, Ajanta Barh, Ursula Keller

ETH Zürich, Switzerland

We present a high-precision (<0.03%) nonlinear reflectivity and pump-probe characterization of InGaSb/GaSb quantum-well-based SESAMs for high-power 2.1 μm Ho-doped lasers. The SESAMs have ~1% modulation depth, high saturation fluences and fast recovery times.