| Session | |
Oral Session 06: Design of WBG Switching Cell
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| Presentations | |
Measuring of Parasitic Inductances through Resonance Effects in GaN Half-Bridges Kaiserslautern University of Applied Sciences, Germany Investigation of mutual inductance on GaN-HEMT switching in a half-bridge circuit 1University of Nottingham, United Kingdom; 2INSA Lyon, France Guidelines for Accurate Device-Circuit Coupled Modeling for More Advanced Optimization of Power Electronic Switching Cell 1Advanced Power Semiconductor Laboratory - ETH Zürich, Switzerland; 2Laboratory for High Power Electronic Systems - ETH Zürich | |