Conference Agenda
Overview and details of the sessions of this conference. Please select a date or location to show only sessions at that day or location. Please select a single session for detailed view (with abstracts and downloads if available).
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GEOM: Geometric Modeling & Processing Location: B8.1.2 Session Chair: Prof. Domenico Marzullo, university of Trieste Session Chair: Dr. Francesco Buonamici, University of Florence | |
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Thermo-Mechanical Stress Analysis of SiN Passivation Induced by Manufacturing Processes in Power Semiconductor Devices 1: Universita' di Catania; 2: STMicroelectronics; 3: Universita' di Messina Silicon nitride (SiN) passivation layers play a crucial role in ensuring the long-term reliability of power semiconductor devices by protecting sensitive regions from environmental and electrical stresses. However, thermo-mechanical loads induced during fabrication and as sembly processes can generate significant stresses within the passivation stack, potentially leading to crack initiation and reliability degradation. In this work, a finite element-based thermo-mechanical analysis is per formed to qualitatively assess the stress state induced in a SiN passi vation scheme by three key manufacturing steps: SiN deposition, die sintering, and package-level (STPAK) sintering. Simplified geometrical models and material descriptions are adopted to isolate the contribu tion of each process and to rank their relative impact. Results indicate that SiN deposition, dominated by intrinsic and thermal stresses due to cooling from deposition temperature, is by far the most critical pro cess, generating stresses exceeding 500 MPa at room temperature. In contrast, die and package sintering processes produce comparatively mi nor stress variations. The study provides useful design-oriented insights for process optimization and reliability-aware passivation design, while clearly identifying the limits of quantitative interpretation. | |